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GP800NSS33
GP800NSS33
Single Switch IGBT Module Preliminary Information
Replaces February 2000 version, DS5358-2.0 DS5358-2.1 March 2001
FEATURES
s s s
Non Punch Through Silicon Isolated Copper Baseplate with AL2O3 Substrate Low Inductance Internal Construction
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
3300V 3.6V 800A 1600A
APPLICATIONS
s s s s
High Power Inverters Motor Controllers Induction Heating Resonant Converters Aux C
External connection C1 C2
The Powerline range of high power modules includes dual, half bridge and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP800NSS33 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety.
G Aux E E1 E2
External connection Fig. 1 Single switch circuit diagram
C1
ORDERING INFORMATION
Order As: GP800NSS33 Note: When ordering, please use the whole part number.
E2 G
E1
C1
E2
C2
E2 - Aux Emitter C1 - Aux Collector
Outline type code: N (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP800NSS33
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Isolation voltage Tcase = 70C 1ms, Tcase = 110C Tcase = 25C, Tj = 150C Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 3300 20 800 1600 8.3 6 Units V V A A kW kV
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Parameter Thermal resistance - transistor Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Junction temperature Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 -40 125 125 125 5 2 10 C C C Nm Nm Nm 8 C/kW 30 C/kW Min. Max. 15 Units C/kW
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP800NSS33
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC = 120mA, VGE = VCE VGE = 15V, IC = 800A VGE = 15V, IC = 800A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 800A IF = 800A, Tcase = 125C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4 Typ. 3.6 4.5 2.3 2.4 200 15 Max. 2 70 12 7.5 4.3 5 800 1600 2.9 3 Units mA mA A V V V A A V V nF nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP800NSS33
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy Test Conditions IC = 800A VGE = 15V VCE = 1800V RG(ON) = = 3.3 RG(OFF) = 6.8 CGE = 440nF, L ~ 100nH IF = 800A, VR = 1800V, dIF/dt = 3600A/s-1 Min. Typ. 3.2 0.7 1 1.1 0.4 1.2 750 400 0.45 Max. Units s s J s s J C A J
Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy Test Conditions IC = 800A VGE = 15V VCE = 1800V RG(ON) = = 3.3 RG(OFF) = 6.8 CGE = 440nF, L ~ 100nH IF = 800A, VR = 1800V, dIF/dt = 3000A/s-1 Min. Typ. 3.4 1.1 1.5 1.1 0.5 1.5 800 650 0.7 Max. Units s s J s s J C A J
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP800NSS33
TYPICAL CHARACTERISTICS
Vge = 20/15/12/10V 1600 1400 1200
Collector current, Ic - (A)
Vge = 20/15/12/10V 1600 Common emitter Tcase = 125C
Common emitter Tcase = 25C
1400 1200
Collector current, Ic - (A)
1000 800 600 400 200 0 0
1000 800 600 400 200 0 0
1.0
2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V)
6.0
1.0
2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V)
6.0
7.0
Fig.3 Typical output characteristics
Fig.4 Typical output characteristics
1600 1400 Tj = 25C 1200
Foward current, IF - (A)
1800 1600 1400
Tj = 125C
1000 800 600 400 200 0 1.0
Collector current, IC - (A)
1200 1000 800 600 400 Tcase = 125C Vge = 15V Rg(ON) = 3.3 200 R g(OFF) = 6.8 CGE = 440nF 0 2500 0 500 1000 1500 2000 3000 Collector-emitter voltage, Vce - (V)
1.5
2.0 2.5 Foward voltage, VF - (V)
3.0
3.5
3500
Fig.5 Diode typical forward characteristics
Fig.6 Reverse bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP800NSS33
10000
100
Transient thermal impedance, Zth (j-c) - (C/kW )
IC max. (single pulse) 1000
Diode Transistor 10
Collector current, IC - (A)
IC
100
ax m .D C
tp = 50s tp = 100s tp = 1ms
o (c nt in uo us
1
10
)
Conditions: Tvj = 125C, Tcase = 70C 1 1 10 100 1000 Collector-emitter voltage, Vce - (V) 10000
0.1 0.001
0.01
0.1 Pulse width, tp - (ms)
1
10
Fig.7 Forward bias safe operating area
Fig.8 Transient thermal impedance
1400
300 290 Tvj = 25C, VCE = 25V VGE = 0V, f = 1MHz
1200
280
DC collector current, IC - (A)
1000
Input capacitance, Cies - (nF)
270 260 250 240 230 220
800
600
400
200
210 200 0
0 0
20
40 60 80 100 120 Case temperature, Tcase - (C)
140
160
10
20 30 40 50 Collector-emitter voltage, VCE - (V)
60
Fig. 9 DC current rating vs case temperature
Fig.10 Typical input capacitance
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP800NSS33
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
62 20 20 62
C1
48.8
10.35
E2
10.65
24.5
G
E2
C2
E2 - Aux Emitter C1 - Aux Collector 6x M4
40 45.2
20
4x M8
38 28
5 140 Nominal weight: 1600g Module outline type code: N
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
31.5
43.5 57 65
6x O7
18
57
65
E1
C1
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GP800NSS33
ASSOCIATED PUBLICATIONS
Title Electrostatic handling precautions An introduction to IGBTs IGBT ratings and characteristics Heatsink requirements for IGBT modules Calculating the junction temperature of power semiconductors Gate drive considerations to maximise IGBT efficiency Parallel operation of IGBTs - punch through vs non-punch through characteristics Guidance notes for formulating technical enquiries Principle of rating parallel connected IGBT modules Short circuit withstand capability in IGBTs Driving high power IGBTs with Concept gate drivers Application Note Number AN4502 AN4503 AN4504 AN4505 AN4506 AN4507 AN4508 AN4869 AN5000 AN5167 AN5190
POWER ASSEMBLY CAPABILITY
The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of Dynex semiconductors. An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today.
HEATSINKS
The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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GP800NSS33
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontarion, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS5358-2 Issue No. 2.1 March 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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